Dual npn transistor

dual npn transistor Dual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin SOT363 package. 2 0. Cut Tape. Mouser offers inventory, pricing, & datasheets for NPN Dual Bipolar Transistors - BJT. Configuration = Dual Transistor Polarity = NPN, PNP. A transistor can be used for switching operation for opening or closing of a circuit. • Transistor elements are independent, eliminating interference. The BFU520Y is part of the BFU5 family of tr ansistors, suitable for small signal to medium power applications up to 2 GHz. Bipolar Transistor Array, Dual NPN, 100 V, 1. MAT-02/AD. 1 1 10 100 0 100 200 300 400 500 0246810 12 0. 1. Buy Dual NPN Bipolar Transistors. In contrast, a unipolar transistor, such as a field-effect transistor, uses only one kind of charge carrier. NPN transistors can be used as a control and also these can be biased using higher supply voltages due to the built in current limiting base resistor of 47 K Ohm. Item # MPT-01AH. DUAL NPN TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2920 and 2N2920A are dual silicon NPN transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. 20 0. , particularly at a point of load. Transistor Polarity = Dual NPN. 100mA, 30V, NPN Silicon Double AF General Purpose Transistor. 0 The SSM2212 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems. PINNING - SOT363A PIN SYMBOL DESCRIPTION 1b1 . com 3/3 Doc. Availability. NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. 3-3-12012020 Internal Structure Features • Two DTC114E Chip In a Package • Mounting Possible With SOT-363 Automatic Mounting Machines • Transistor Elements Independent, Eliminating Interference • Design For Saving Space and Cost • Halogen Free. Transistor of the Week JAN2N2060 Dual Matched NPN Mfg: Raytheon, Date Code: 7848, Type: Dual Matched NPN Silicon, P D: 0. 1 Filter(s) Selected . 1- DC CURRENT GAIN I , COLLECTOR CURRENT (mA) C DC CURRENT GAIN (NORAMALIZED) FE 0. They are assembled to create a pairof devices highly matched in all parameters, including ultra lowsaturation voltage VCE(sat), high current gain and Base/Emitter turn onvoltage. DUAL Digital Transistor(NPN+NPN) FEATURES SOT-363 0. The total dose effects of 80 MeV carbon ions and 60Co gamma radiation in the dose range from 1 Mrad to 100 Mrad on advanced 200 GHz Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs . Avnet has recently acquired Premier Farnell, so now you can enjoy a larger breadth of products to suit your needs. The SOT-363 package which has been designed to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM) sts01dtp06 dual npn-pnp complementary bipolar transistor . Transistors 1/2 Dual digital transistors . Generally the NPN transistor is the most used type of bipolar transistors because the mobility of electrons is higher than the mobility of holes. Bipolar Junction Transistor Arrays - BJT (144) Bipolar RF Transistors (9) Show All Products dual channel source . Bipolar (BJT) Single Transistor, Dual NPN, 45 V, 100 mA, 380 mW, SOT-363, Surface Mount. IMH23 . Low-Noise Matched Transistor Arrays. The THAT 300, 320 and 340 are large geometry, 4-transistor, monolithic NPN and/or PNP arrays. SiGe HBT technology combines transistor . (BVCEO = 40V@I =1mA) • Small load switch Transistor with high gain and low stauration voltage, is designed for general purpose amflifier and switching applications at collector current. 5 MECHANICAL DATA - Terminal: Pure tin plated, lead free. With its extremely low input base spreading resistance (rbb' is typically 28 Ω) and high current gain (h FE typically exceeds 600 at I C = 1 mA), the SSM2212 can achieve outstanding signal-to-noise ratios. Dual NPN Bias Resistor Transistors R1 = 4. TO-71 6L Top View TO-78 6L Top View LOW NOISE AND THERMALLY MATCHED MONOLITHIC DUAL NPN TRANSISTOR Features • Unique Monolithic Dual Design Low Voltage Noise, 2. 2kOhms: 6-VSSOP, SC-88, SOT-363: FMG3AT148: TRANS 2NPN PREBIAS 0. 5 A, T j: 200 ºC f T: 60 MHz, C C: 15 pF, h FE: 50 min, Package: TO-77(6 pin TO-5) This device is listed as"for parts or not working" because we cannot guarantee proper . Built-in bias resistors enable the configuration of an inverter circuit without external input resistors. 25 : 2SC2498 3500 Mhz . The NPN transistor has three terminals – emitter, base and collector. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix . 7nV-typ at f=100Hz •Low Vbe Matching 2mV-max • Low Vbe Temperature Drift 3µV/˚C-max Bipolar Transistor Array, General Purpose, Dual NPN, 45 V, 100 mA, 380 mW, 450 hFE, SOT-363. 3) Two DTC643T chips in a . By dc source Vbb, the base to emitter junction will be forward biased. 5mA, makes these transistors ideal for muting circuits. You previously purchased this product. 1: $0. the performance degradation and annealing behavior of NPN SiGe HBT exposed to swift heavy ion irradiation were investigated. The NTE3223 −1 comes in a 4−Lead DIP type package with an NPN transistor output. 4-BASE-EMITTER TEMPERATURE COFFICIENT BC846 Series Rating and characteristic curves (NPN) Fig. BJTs NPN and PNP schematic symbols. 0 Dual NPN Transistor. MUN5235DW1: Dual NPN Bipolar Digital Transistor (BRT) This series of digital transistors is designed to replace a single device and its external resistor bias network. Both NPN and PNP transistors can be used as switches. Quantity 2N2222 NPN Transistor Introduction. Dual NPN Digital Transistor UMH13N Device Marking:H13 Rev. A bipolar transistor allows a small current injected at one of its terminals . NPN Dual Bipolar Transistors - BJT are available at Mouser Electronics. 10: This Dual NPN Bipolar Transistor is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. 87 : 40673 Dual Gate Mosfet Transistor $ 5. It was originally made in the TO-18 metal package. UMH25NFHA NPN+NPN, SOT-363, Dual Digital Transistor (Bias Resistor Built-in Transistor) for automotive. They are housed in the SOT−363/SC−88 which isdesigned for low power surface mount applications. Applications are Current Mirrors; Differential, NPN Transistor Output Description: The NTE3223 −1, NTE3223−2 and NTE3223 −3 are a series of optically coupled isolators which consist of GaAs light emitting diodes and NPN silicon photo transmitters in space efficient dual−in−line plastic packages. Refer to SC-88 (SOT363) standard mounting conditions. -CAPACITANCE Fig. 87 The LM194 is the end result. . application n push-pull or totem-pole configuration n mosfet and igbt gate driving n motor, relay and solenoid driving so-8 description the is a hybrid dual npn-pnp NPN+NPN DIGITAL TRANSISTOR (CORR: 2 NPN - Pre-Biased (Dual) 100mA: 50V: 2. But the techniques for thermal gradient cancellation should be applicable, as is laser-trimming. 0pF. 25 : 3N211 Dual Gate Mosfet Transistor $ 7. This type solid state switching offers significant reliability and lower cost when compared to conventional relays. Mouser offers inventory, pricing, & datasheets for SMD/SMT SOT-363-6 Dual NPN, PNP Bipolar Transistors - BJT. 3D Model / PCB Symbol. Matching NPN to PNP isn't achievable like with 2 NPNs or 2 PNPs, as the dopants are different for the two devices. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds. Datasheet. It works on high transition frequency value 250MHz with delay time 10ns, rise time 25ms, storage time 225ms and fall time 60ms. 98 : BF960 Dual Gate Mosfet Transistor $ 3. The BFU550 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. Refer to the LS350/1/2 dual PNP for the counterpart version. 87. Transistor as a Switch. 1 0. 5mA DDC144NS features discrete dual NPN transistors that can support continuous maximum current up to 100 mA. Dual General Purpose Transistor NPN+NPN Silicon. Can ship immediately: 0. 1) Low saturation voltage, typically . 75 V Base-emitter Saturation Voltage V BE(sat) I C = 150mA I B = 15mA I C = 500mA B . NPN Transistor: In the NPN transistor middle region i. 87 : BF961 Dual Gate Mosfet Transistor $ 3. 2N4401 NPN TO-92 Case $ 0. Price/ea. 6 W, V CBO: 100 V, V CEO: 60 V, V EBO: 7 V, I C: 0. Results: 230. In addition to the features of regular digital transistors. Cob=2. Zetex - ZXTDCM832 Dual 50V NPN silicon low saturation switching transistor datasheet DC-DC conversion Charging circuits Power switches Motor control CCFL backlighting Extremely low saturation voltage (100mV @ 1A) hFE characterized up to 6A IC = 4A continuous collector current 3mm x 2mm MLP Low equivalent on-resistance The 2N2222 is a common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications. Unit Collector-emitter Saturation Voltage V CE(sat) I C = 150mA I B = 15mA I C = 500mA B = 50mA-0. They exhibit both high speed and low noise, with excellent parameter matching between transistors of the same gender. 3,705 In Stock. Smart Filtering. $7. PINNING - SOT363A PIN SYMBOL DESCRIPTION . VCE (sat) =40mV at IC / IB=50mA / 2. View in Order History. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers and satellite TV-tuners. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 416 K/W npn switching an pnp with dual led. , emitter and collector are of n-type. , base is of p-type and the two outer regions i. Therefore, at this junction depletion region will be reduced. The SOT-363 package which has been designed to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM) The MMDT2222A is a DUAL NPN Small Signal SURFACE MOUNT Transistor, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. 25 COMMON EMITTER V CE =10V 600 I C T a =25℃ . Dual NPN Digital Transistor UMH11N Device Marking:H11 Rev. DUAL TRANSISTOR(NPN+NPN) Rohm: EMX18 82Kb / 4P: General purpose transistors (dual transistors) EMX18 38Kb / 3P: General purpose transistors (dual transistors) THAT 300 Series. Dual NPN Small Signal Surface Mount Transistor Typical Characteristics: @ Ta = 25°C unless otherwise specified Parameter Symbol Test Conditions Min. The transistors are primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers and satellite TV-tuners. 522-ZXTC6720MCTA. NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifierapplications. zFeatures . 15 0. Typ. 5 2. e. 2 Features and benefits Low noise, high breakdown RF transistor AEC-Q101 qualified BCV61C/INF. The date & lot code information will be displayed on your packaging label as provided by the manufacturer. In forward active mode, the NPN transistor is biased. There used to be pages in the data books of dual transistors & JFETs for external long-tailed pair on the front end of op amps. 02. Making an effort, even if not entirely successful, to match pnp and npn is better than not doing so. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5V Peak Pulse Current ICM 20 A Continuous Collector Current IC 5A Base Current IB 500 mA The MMDT2222A is a DUAL NPN Small Signal SURFACE MOUNT Transistor, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. MAT01. Note 1. It features two discrete NPN transistors which can support maximum continuous current of 100 mA. Product Image Gallery. 3-4-06162021 Internal Structure Features • Two DTC143Z Chip In a Package • Reduces Component Capability • Halogen Free. element14 offers special pricing, same day dispatch, fast delivery, wide inventory, datasheets & technical support. Dual NPN Transistor Output Description: The NTE3086 is a standard dual optocoupler consisting of a GaAs Infrared LED and a silicon photo-transistor per channel. Features: Two isolated Channels per Package Dual NPN Digital Transistor UMH11N Device Marking:H11 Rev. Diodes Incorporated. Buy Dual NPN Bipolar RF Transistors. , solderable per MIL-STD-202, Method 208 guaranteed MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise noted) PARAMETER PARAMETER Input voltage Vcc=5V, Io=100uA Io/I I=10mA/0. 19 IN STOCK . = Dual NPN. NPN/NPN Low Noise, Matched Dual Monolithic General Purpose Bipolar Transistor. • Low Cob. 4 0. • Mounting cost and area can be cut in half. A bipolar junction transistor ( BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. MPT-01AH Dual NPN Transistor, TO-78 six lead case. USMMDT3904xSC2. This device is constructed with a high voltage insulation, double molded pack-aging process which offers 7. 25 W, 3 A, 10, SOT-1205 RoHS Compliant: Yes NEXPERIA The date & lot code information will be displayed on your packaging label as provided by the manufacturer Dual NPN Transistor. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias MPT-01AH Matched NPN Dual Transistor. 25 : 2N4403 PNP TO-92 Case $ 0. It means it has a high collector therefore it is mostly used in that circuits where low to medium current is required. 300 Watt Transistor TO-92 Case $ 1. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. Bipolar Transistors - BJT Dual 80V NPN 70V PNP VCEO 80V Rsat 68mOhm. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ISSUE 1 Œ JANUARY 1996 PARTMARKING DETAIL Œ T1049 ABSOLUTE MAXIMUM RATINGS. The NPN transistor is mostly used for amplifying and switching the signals. 05 0. Dual Matched General Purpose Transistor NPN Matched Pair These transistors are housed in an ultra−small SOT−363 package ideally suited for portable products. “Green” Device (Note 1) Dual NPN Transistor Package Outline Dimensions SOT-363 Suggested Pad Layout Device Package Quantity HSF Status MMDT3904 SOT-363 K6N 3000pcs / Reel RoHS Compliant Marking and Ordering Information Marking www. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. Dual NPN Transistor Package Outline Dimensions SOT-363 Suggested Pad Layout Device Package Quantity HSF Status MMDT3904 SOT-363 K6N 3000pcs / Reel RoHS Compliant Marking and Ordering Information Marking www. Newark offers fast quotes, same day shipping, fast delivery, wide inventory, datasheets & technical support. 0 10 100 0. Applied Filters: Semiconductors Discrete Semiconductors Transistors Bipolar Transistors - Pre-Biased. Dual transistor with two silicon NPN RF dies in a surface mount, 6-pin SOT363 (S-mini) package. These transistors are part of the ON Semiconductor e2PowerEdgefamily of Low VCE(sat) transistors. 2-"ON" VOLTAGE Fig. 100mA, 50V, NPN/NPN Double Digital Transistor. As you select one or more parametric filters below, Smart Filtering will instantly disable any unselected values that would cause no results to be found. 98 : 3SK88 Dual Gate Mosfet Transistor $ 3. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias The SSM2212 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems. So when control V is low NPN LED is on and PNP LED is off and when control V is High NPN LED is off and PNP LED is on. 2N2222 provides continuous dc collector current is 800mA. goodarksemi. General Purpose NPN Epitaxial Planar Transistors (dual transistors) HBN2412S6R Features • Two BTC2412 chips in a SOT-363R package. This was accomplished without compromising breakdown voltage or current gain. 00 0. Dual NPN Bias Resistor Transistors R1 = 10 k , R2 = 47 k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. Usually in a 6 pin TO18 or TO5, they were designed to be closely thermally and parameter matched. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias SMD/SMT SOT-363-6 Dual NPN, PNP Bipolar Transistors - BJT are available at Mouser Electronics. NPN general purpose double transistor BC846S THERMAL CHARACTERISTICS Note 1. Max. NPN 100mA 50V digital transistor. Pulse test: tp ≤ 300 μs; δ ≤ 0. It is a monolithic bipolar matched transistor pair that offers an order-of-magnitude improvement in matching properties and parasitic base and emitter resistance over conventional transistor pairs. Typical base-spreading resistance is 25Ω for the PNP devices (30Ω for the low . The component devices can be used as a part of a circuit or as a stand alone discrete device. 7 k , R2 = 47 k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. 2 1. “Green” Device (Note 1) Dual transistor with two silicon NPN RF dies in a surface mount 6-pin SOT363 (S-mini) package. NPN+NPN, SOT-363, Dual Digital Transistor (Bias Resistor Built-in Transistor) Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth. The MAT12 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems. DDC144TU is best suited for logic switching applications using control circuits like micro-controllers, comparators, etc. 25mA, 45V, NPN Matched Monolithic Dual Transistor (AA Enabled) PUMH1/PLP. 5KV withstand test capability. 0 V=V 5 T= 25C OPTOCOUPLER DUAL NPN TRANSISTOR OUTPUT BVCEO=80V IF=50MA VISO=5KV 8 LEAD DIP Download Datasheet. ONSEMI. 2) These transistors can be used at high current levels, IC=600mA. 5. Features: Two isolated Channels per Package Dual NPN +PNPEpitaxial Planar Transistor Fig. By putting two discrete devices in one package, these devices are ideal for low-power surface mount applications where board space is at a premium. 3W SMT5 : 2 NPN - Pre . PUMH10/PLP. 0. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. It is suited for applications where the load needs to be turned on and off using circuits like micro-controllers, comparators, etc. • Mounting possible with SOT-323 automatic mounting machines. im trying to use a 0-7V control signal to switch an NPN controlling a LED but then using collector of the NPN to switch a PNP. 10 0. high gain low vce(sat) simplified circuit design reduced component count. Features • High collector-emitterbreakdien voltage. dual npn transistor